nmos linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. the scanning circuit is made up of n-channel mos transistors, has low power consumption and is easy to handle. each photodiode has a large a ctive area, high uv sensitivity yet very low noise, delivering a high s/n even at low light levels. current output type nmos linear image s ensors also offer excellent output linearity and wide dynamic range. s3901-fx series image sensors are variants of s3901-f series nmos image sensors. having a phosphor-coated fiber optic plate (fo p) as the light input window, the s3901-fx series was developed for detection of x-rays and electrons. the s3901-fx offers particularly h igh sensitivity to x-rays from 10 k to 100 kev. the phosphor material used is gadolinium ox sulfide (gd 2 o 2 s tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. the s3901-fx series active area consists of a photodiode array with pixels formed at 50 m pitches and a height of 2.5 mm. the number of pixels can be selected from 256 or 512. hamamatsu s3904 series nmos linear image sensors are also available with fop windows coated with the same phosphor material as s3901- fx series. using photodiodes with no phosphor and fop window also allows direct detection of x-rays at energy levels below 10 kev. features l wide active area pixel pitch: 50 m pixel height: 2.5 mm l low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l excellent output linearity and sensitivity spatial uniformity l low power consumption: 1 mw max. l start pulse and clock pulse are cmos logic compatible applications l test equipment using x-ray and electron beam transmission l x-ray non-destructive inspection l x-ray and electron beam detector image sensor nmos linear image sensor image sensor highly sensitive to x-rays from 10 k to 100 kev s3901-fx series 2.5 mm 1.0 m 1.0 m 400 m oxidation silicon n type silicon p type silicon fiber optic plate 45 m 50 m phosphor material vss start st clock clock 1 2 active photodiode saturation control gate saturation control drain dummy diode dummy video active video end of scan degital shift register (mos shift register) kmpdc0020ea equivalent circuit active area structure absolute maximum ratings parameter symbol value unit input pulse ( 1, 2, st) voltage v 15 v power consumption* 1 p 1 mw operating temperature* 2 topr -30 to +60 c storage temperature tstg -40 to +80 c *1: v =5.0 v *2: no condensation kmpdc0008ea 1
nmos linear image sensor s3901-fx series shape specifications parameter s3901-256fx s3901-512fx unit number of pixels 256 512 - package length 31.75 40.6 mm number of pin 22 - window material* 3 fiber optic plate - weight 8.0 10.0 g *3: to prevent unwanted effects from stray light, s3901-fx series is supplied with an aluminum cover fitted on the phosphor- coated fop. specifications (ta=25 c) parameter symbol min. typ. max. unit pixel pitch - - 50 - m pixel height - - 2.5 - mm spectral response range (20% of peak) 10 to 100 kev photo sensitivity s - 0.013 - pc/mr photodiode dark current* 4 i d - 0.2 0.6 pa photodiode capacitance* 4 cph - 20 - pf saturation exposure* 4 esat - 4 - r saturation output charge* 4 qsat - 50 - pc photo response non-uniformity* 5 prnu - - 10 % *4: vb=2.0 v, v =5.0 v *5: measured under the following conditions including uniformity in the phosphor emission (but excluding dark current components). x-ray tube voltage: 40 kv, tube current: 3 ma distance between s3901-fx series and x-ray tube: 4 cm phosphor material: gd 2 o 2 s . tb (thickness=200 m, p=550 nm, decay time=1 ms) electrical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit high v 1, v 2 (h) 4.5 5 10 v clock pulse ( 1, 2) voltage low v 1, v 2 (l) 0 - 0.4 v high v s (h) 4.5 v 1 10 v start pulse ( st) voltage low v s (l) 0 - 0.4 v video bias voltage* 6 vb 1.5 v - 3.0 v - 2.5 v saturation control gate voltage vscg - 0 - v saturation control drain voltage vscd - vb - v clock pulse ( 1, 2) rise / fall tim e * 7 tr 1, tr 2 tf 1, tf 2 - 20 - ns clock pulse ( 1, 2) pulse width tpw 1, tpw 2 200 - - ns start pulse ( st) rise / fall time tr s, tf s - 20 - ns start pulse ( st) pulse width tpw s 200 - - ns start pulse ( st) and clock pulse ( 2) overlap t ov 200 - - ns clock pulse space* 7 x 1 , x 2 trf - 20 - - ns data rate* 8 f 0.1 - 2000 khz - 120 (-256 fx) - ns video delay time tvd 50% of saturation * 8 * 9 - 160 (-512 fx) - ns - 36 (-256 fx) - pf clock pulse ( 1, 2) line capacitance c 5 v bias - 67 (-512 fx) - pf - 20 (-256 fx) - pf saturation control gate (vscg) line capacitance cscg 5 v bias - 35 (-512 fx) - pf - 11 (-256 fx) - pf video line capacitance c v 2 v bias - 20 (-512 fx) - pf *6: v is input pulse voltage *7: trf is the clock pulse rise or fall time. a clock pulse space of ? rise time/fall time - 20 ? ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns. *8: vb=2.0 v, v =5.0 v *9: measured with c7883 driver circuit. 2
nmos linear image sensor s3901-fx series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. cat. no. kmpd1005e06 jul. 2010 dn dimensional outlines (unit: mm) s3901-256fx 0.51 25.4 2.54 3.0 3.4 active area 12.8 2.5 6.4 0.3 31.75 10.4 5.4 0.2 5.0 0.2 0.25 10.0 10.16 chip surface kmpda0031eb s3901-512fx 0.51 25.4 40.6 10.4 5.4 0.2 5.0 0.2 12.8 0.3 active area 25.6 2.5 0.25 10.16 2.54 10.0 3.0 3.4 chip surface kmpda0032eb nc nc nc nc nc nc nc nc nc nc end of scan 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 2 1 st vss vscg nc vscd vss active video dummy video vsub vss, vsub and nc should be grounded. kmpdc0056ea pin connection
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